Compound Etching
Posted by trion on Jul 30, 2014 in | 0 comments
AlGaAs
AlGaAs is usually accomplished with a BCl3/Cl2 chemistry using a non-selective processes at a very low pressure. Processes have been developed to etch GaAs/AlGaAs sandwich structures at rates over 2500 Å /min
20 micron GaAs/AlGaAs mesa with photoresist removed. The bottom 10 microns is GaAs only. Argon, Cl2, RIE/ICP turbo pump, 1700 Å/min, Selectivity (GaAs:PR = 2.1:1), 4:1 selectivity to PR, +/- 4% uniformity.
GaAs AlGaAs 5
GaAs AlGaAs 6
GaAs AlGaAs 9
Gallium Arsenide (GaAs)
This Chlorine based process will etch at rates over 5000 Å /min, whist still producing smooth sidewalls with no undercut.
Gallium Nitride (GaN)
GaN structures are found in a variety of photonic devices including photo detector, lasers, and LED’s. Typically these structures are patterned with a thick coat of photoresist, or a thin metal mask, and the etched surface and sidewalls should be extremely smooth. Processes have been developed with etch rates of over 3,500 Å /min.
Indium Gallium
Indium Gallium Arsenide Phosphide with SiO2 hard mask. Conditions include a Cl2/BCl3 chemistry with a temp of 100°C. (Courtesy of Applied Opto.)
Indium Phosphide (InP)
Etching of InP is usually accomplished with Chorine based chemistries, or Methane/Hydrogen. Rates can be at over 2000 Å /min for chlorine based chemistries. The CH4/H2 process is slow, but it has a very high selectivity to silicon nitride, silicon oxide and photoresist.
InP Lens Etch
Cl2/BCl3, HBr/BCl3 or H2/CH4 chemistries can be used to create a lens in InP with a process developed to produce a 1:1 selectively to PR.
PAPERS:
- Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials
System by M. Reed, North Carolina State University
Application: Compound Semiconductor – GaN
Trion Tool: Minilock-Phantom RIE/ICP
- Study of GaN-based Materials for Light-Emitting Applications by P. Barletta, North
Carolina State University
Trion Tool: Minilock-Phantom RIE/ICP
- VCSELs With a Self-Aligned Contact and Copper-Plated Heatsink by A. Al-Omari and K.
Lear
Trion Tool: Minilock-Phantom RIE
- Nonreciprocal lasing in topological cavities of arbitrary geometries by B. Bahari, A. Ndao, F. Vallini, A. El Amili, Y. Fainman, B. Kanté – University of California San Diego (published in Science Journal)
Application: Compound Semiconductor – InGaAsP
Trion Tool: Minilock-Phantom RIE/ICP
- Luminescent hyperbolic metasurfaces by J.S.T. Smalley, F. Vallini, S.A. Montoya, L. Ferrari, S. Shahin, C.T. Riley, B. Kanté, E.E. Fullerton, Z. Liu, Y. Fainman – University of California San Diego (published in Nature Communications Journal)
Application: Compound Semiconductor – InGaAsP
Trion Tool: Minilock-Phantom RIE/ICP
- Research Letter: Lasing action from photonic bound states in continuum by A. Kodigala, T. Lepetit, Q. Gu, B. Bahari, Y. Fainman, B. Kanté – University of California San Diego (published in Nature Journal)
Application: Compound Semiconductor – InGaAsP
Trion Tool: Minilock-Phantom RIE/ICP
- Research Supplementary Information: Coupled Wave Theory, Device fabrication, Odd and Even modes, Group Theory and tunable off-BIC, CWT and BICs, Device characterization, Threshold Power Density versus Array Size, Far-field and Polarization Measurements – University of California San Diego (published in Nature Journal)
Application: Compound Semiconductor – InGaAsP
Trion Tool: Minilock-Phantom RIE/ICP
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