What is Plasma Etching?

Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma will generate volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target.

ETCH Process Development

Materials supported by Trion’s tools for ETCHING include:

Aluminum (Al) – anisotropicCl2 + BCl3
Aluminum (Al) – isotropicCl2 + BCl3
Aluminum Gallium Arsenide (AlGaAs)SiCl4 + BCl3 + Ar
Aluminum Nitride (AlN)Cl2 + BCl3
Black DiamondCF4
BPSGCHF3/ (02 or Ar)
Carbon (C)O2 + Argon
Chrome (Cr)Cl2 + O2
Copper (Cu)BCl3 + Cl2  (heat)
EpoxyO2 + %5 CF4
Gallium Antimonide (GaSb)Ar + Cl2 (5:1)
Gallium Arsenide (GaAs) – thinningCl2 + BCl3 (isotropic)
Gallium Arsenide (GaAs)  – profileCl2+BCl3 (anisotropic)
Gallium Arsenide (GaAs)Cl2 + BCl3
GaAs/AlGaAs – selective etchSF6 + BCl3
Gallium Nitride (GaN)Cl2
GoldHBr + BCI3
Graphite (C)O2 + Argon
Indium & Aluminum – containing III-V’sHBr + BCI3
Indium Phosphide (InP)CH4 + H2
Indium Phosphide (InP)HBr + BCI3
Iridium (Ir)SF6
Molybdenum (Mo)SF6
OxynitrideCF4 + 5% O2
PlatinumCl2, Ar (90oC)
PolyimideO2 + Ar
Polysilicon – isotropicCl2
Polysilicon – anisotropicCl2
PSGCF4 /  (O2 or Ar)
QuartzCHF3 + CF4
Sapphire (Al2O3)BCl3
Silicon (Si)CF4 + 2% O2
Silicon Carbide (SiC)NF3 + O2
Silicon Dioxide (SiO2)CF4 + CHF3
SiLK (Pr)CF4
SU8 (Pr)O2 + CF4
SU8 (Pr)O2 + Ar + CF4
Silicon Nitride (Si3N4)SF6/O2 or CF4/O2
Tantalum – anisotropicCF4 + O2
Tantalum – isotropicCF4 + O2
Tantalum Nitride (TaN)CF4 + O2
Titanium (Ti)Cl2 + BCl3
Tinitride (TiN)CF4 + O2
Titanium Tungsten (TiW) – isotropicSF6
Titanium Tungsten (TiW) – anisotropicSF6
Tungsten (W) – isotropicSF6
Tungsten (W) – anisotropicSF6
Amorphous SiliconSiH4

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