Minilock ALD

Minilock ALD

Atomic Layer Deposition (ALD) is a new cutting edge technology for the Semiconductor Industry. It provides super high-density films that are extremely uniform with exceptional step coverage. The Minilock ALD system has the capability to grow Atomic Layer Deposition films in Thermal and Plasma Enhanced modes (PEALD). It has the industry’s smallest footprint and lowest cost of ownership.The system is available for wafers up to 300mm in diameter.

ALD is a thin-film deposition technique based on the sequential use of a gas-phase chemical process and/or plasma processes (PEALD). The majority of ALD reactions use two chemicals called precursors and reactants. The precursor adsorbs onto the surface of the material and the reactant is added thereafter, one at a time in a sequential, self-limiting, manner.

By keeping our core components the same, it is very easy to scale to a production cluster platform.

Standard processes have been developed for various materials. This is backed by over 25 years’ experience in rapid process development.


  • Inductively Coupled Plasma Source (ICP, PEALD)
  • Biased electrode
  • Vacuum loadlock
  • 4 Precursor entry points
  • Turbo pump
  • Programmable Logic Controller (PLC) and touch screen control
  • SEMI S2 and CE compliant

Minilock ALD Brochure
Process Page

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