A technique that allows thin films to be deposited onto the surface of a substrate
| MATERIAL | GAS USED |
|---|---|
| Oxide | TEOS + O2 |
| Oxide – faster deposition | SiH4 + N20 +N2 |
| Nitride | NH3 + DES + N2 |
| Nitride – faster deposition | N2 + NH3 + SiH4 |
| Silicon carbide | Trimethylsilane or Methane (CH4) & SiH4 |