A technique that allows thin films to be deposited onto the surface of a substrate
MATERIAL | GAS USED |
---|---|
Oxide | TEOS + O2 |
Oxide – faster deposition | SiH4 + N20 +N2 |
Nitride | NH3 + DES + N2 |
Nitride – faster deposition | N2 + NH3 + SiH4 |
Silicon carbide | Trimethylsilane or Methane (CH4) & SiH4 |