Plasma ashing is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ash which is removed with a vacuum pump.
Apollo Stripper
Gemini Multi-Chamber Stripper
Trion offers custom carriers. Shown here are examples: single-wafer
and four-wafer carriers designed for processing 100 mm
wafers on 300 mm chuck etching systems.
Download a Brochure:
Gemini Multi-Chamber Photoresist Stripping System
