Sirus T2 Table Top RIE

The Sirus T2 Reactive Ion Etcher is a basic plasma etching system designed to etch dielectrics and other films that require fluorine-based chemistries. The small footprint and robust design make it ideal for the lab environment.


MEMS, Solid State Lighting, Failure Analysis, Research & Development, Pilot Line.

Fluorine Etch Processes

(SF6, CF4, CHF3, O2)

• Carbon• Si
• Epoxy• SiO2
• InSb• Si3N4
• Ir• SiC
• Mo• Ta
• Nb• TaN
• OxyNitride• TiW
• Polyimide • TiN
• Pr (e.g: SiLK or SU8)• W
• Quartz

Tool Standard Features

  • Sirus T2 reactor with 200mm bottom electrode
  • System controller (includes Pentium™ based computer and touch screen interface)
  • Two mass flow controllers
  • Automatic tuning with 13.56 MHz 600 watt RF generator
  • Emergency Off system
  • Automatic pressure control package (butterfly valve with capacitance manometer for pressure measurement)
  • 12 month limited warranty

Optional Features

  • Recirculating temperature controller
  • Up to two additional mass flow controllers


  • 170 l/s turbo
  • 23.3 cfm rotary vane pump with oil filtration, demister, and Fomblin oil
  • The Sirus T2 system requires a roughing pump and either a chiller or cooling water with greater than 4 M ohm resistivity.

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