Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma will generate volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma. Eventually the atoms of the shot element embed themselves at or just below the surface of the target, thus modifying the physical properties of the target.
Minilock-Phantom DRIE
Minilock-Phantom Duo
Minilock-Phantom RIE
Minilock-Phantom RIE ICP
Phantom RIE
Phantom RIE ICP
Phantom RIE ICP Cryo
Oracle Production Cluster Tool
Titan Loadlocked RIE with VCE
Custom carriers – single or four wafer carrier – for 12 inch chuck etching. 400 millimeter wafer
