The Orion HDCVD uses a High Density Chemical Vapor Deposition technique where inert gases are introduced above an inductive coil placed around a ceramic tube. RF is applied to the coil to create a plasma. Volatile gas is introduced near the substrate surface through a gas ring. A chemical reaction occurs when the inert gases combine with the volatile species, and a film is then deposited on the substrate surface.
This technique allows for deposition at low temperature. The substrate does not have to be heated to typical PECVD temperatures; thus the process is well suited for depositing onto organics, flexible substrates, and other surfaces that have temperature limitations.
RF can be applied to the chuck to change the film properties.
These processes are backed by over 25 years’ experience in rapid process development.
This system can be upgraded with a loadlock, or added to a cluster platform.