Plasma ashing is the process of removing the photoresist from an etched wafer. Using a plasma source, a monatomic reactive species is generated. Oxygen or fluorine are the most common reactive species. The reactive species combines with the photoresist to form ash which is removed with a vacuum pump.
Apollo Photoresist Stripper Descum Application Note
Stripper CHARM®-2 Report and Wafer Maps by Wafer Charging Monitors, Inc.
“The following is a summary of your CHARM®-2 experiment. It includes the results obtained with the CHARM®-2 UV, potential, and charge-flux sensors…”