The Orion HDCVD uses a High Density Chemical Vapor Deposition technique where inert gases are introduced above an inductive coil placed around a ceramic tube. RF is applied to the coil to create a plasma. Volatile gas is introduced near the substrate surface through a gas ring. A chemical reaction occurs when the inert gases combine with the volatile species, and a film is then deposited on the substrate surface.

This technique does not require the substrate to be heated to typical PECVD temperatures, and the process is very well suited for depositing onto organics, flexible substrates, and other surfaces that have temperature limitations.

RF can be applied to the chuck to change the film properties.

This system can be upgraded with a loadlock, or added to a cluster platform.

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