Reactive Ion Etch (RIE)



Reactive Ion Etch is a plasma etching technique in which a substrate is placed on a RF powered electrode. The wafer takes on a potential, which accelerates etching species extracted from the plasma toward the etched surface. Introducing different gases can create a chemical reaction, and the etch profiles can range from isotropic to anisotropic by changing the process conditions.

A DC bias measurement can be taken from the chuck which can give a good indication of the amount of etching that is occurring.

Phantom RIE

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