SEMS

20 micron GaAs/AlGaAs mesa with photoresist removed. The bottom 10 microns is GaAs only. Argon, Cl2, RIE/ICP turbo pump, 1700 Å/min, Selectivity (GaAs:PR = 2.1:1), 4:1 selectivity to PR, +/- 4% uniformity.
GaAs AlGaAs 5	GaAs AlGaAs 6	GaAs AlGaAs 9
Indium Gallium Arsenide Phosphide with SiO2 hard mask. Conditions include a Cl2/BCl3 chemistry with a temp of 100°C. (Courtesy of Applied Opto.)
InP 01

Gallium Arsenide/Aluminum Gallium Arsenide Heterostructures Etch
Application: Compound Semiconductor
Trion Tool: Minilock-Phantom III RIE
"It is also required that the etched surface and sidewalls be extremely smooth and that the etch process is non-selective between GaAs and AlGaAs. Etching of GaAs and AlGaAs is usually accomplished with the following chemistry...” read the full article

Gallium Nitride and Other III-Nitrides Etch
Application: Compound Semiconductor
Trion Tool: Minilock-Phantom III RIE
"It is also required that the etched surface and sidewalls be extremely smooth and that the etch process is selective enough to the mask. Etching of GaN is usually accomplished with the following chemistry …” read the full article

Indium Phosphide Etch
Application: Compound Semiconductor
Trion Tool: Minilock-Phantom III RIE
"Typically these structures are patterned with a thick coat of photoresist and it is usually necessary to etch anywhere from 1 to 30 microns of the material. It is also required that the etched surface and sidewalls be extremely smooth and, in some cases, form a rounded structure. Etching of InP is usually accomplished with two different chemistries: …”
read the full article

Process Data for Plasma Etching of Common III-V Materials (GaAs/AlGaAs, InP and GaN)
Application: Compound Semiconductor
Trion Tool: Minilock-Phantom III RIE
"All four materials (GaAs/AlGaAs, InP and GaN) are found in a variety of photonic devices including lenses, photo detectors, lasers and LED’s. …” read the full article

Selective Reactive Ion Etching of P-Doped Polysilicon Using a Cl2/HBr Mixture
Application: Compound Semiconductor, MEMS
Trion Tool: Minilock-Phantom III RIE
"In this letter, a technique for carrying out smooth, selective, and anisotropic etching of p-doped polysilicon will be presented. …" read the full article

PAPER: Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System
By Mason Jacob Reed (North Carolina State University)
Application: Compound Semiconductor – GaN
Trion Tool: Minilock-Phantom II ICP/RIE
http://www.lib.ncsu.edu/theses/available/etd-07052005-162129/

PAPER: Study of GaN-based Materials for Light-Emitting Applications
By Philip Barletta (North Carolina State University)
Application: Compound Semiconductor
Trion Tool: Minilock-Phantom II ICP/RIE
www.lib.ncsu.edu/theses/available/etd-08132006-215853/

PAPER: VCSELs With a Self-Aligned Contact and Copper-Plated Heatsink
By A.N. Al-Omari and K.L. Lear
Application: Compound Semiconductor
Trion Tool: Minilock-Phantom III RIE
IEEE Photonics Technology Letters, Vol. 17, No. 9, September 2005

Apollo Microwave Photoresist Stripper	Mini-lock Phantom ICP
Oracle Plasma Etch & Deposition	Mini-lock Phantom